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  pnp silicon planar medium power transistors issue 1 ? march 94 features * 150 volt v ceo * 1 amp continuous current *p tot = 1 watt absolute maximum ratings. parameter symbol ztx554 ZTX555 unit collector-base voltage v cbo -140 -160 v collector-emitter voltage v ceo -125 -150 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a power dissipation: at t amb = 25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j: t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx554 ZTX555 unit conditions. min. max min. max collector-base breakdown voltage v (br)cbo -140 -160 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -125 -150 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-100 m a collector cut-off current i cbo -0.1 -0.1 m a m a v cb =-120v v cb =-140v emitter cut-off current i ebo -0.1 -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.3 -0.3 v i c =-100ma, i b =-10ma* base-emitter saturation voltage v be(sat) -1 -1 v i c =-100ma, i b =-10ma* base-emitter turn-on voltage v be(on) -1 -1 v ic=-100ma, v ce =-10v* static forward current transfer ratio h fe 50 50 300 50 50 300 i c =-10ma, v ce =-10v* i c =-300ma, v ce =-10v* transition frequency f t 100 100 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 10 10 pf v cb =-10v, f=1mhz e-line to92 compatible ztx554 ZTX555 3-198 c b e typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( s at) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - normalised gain (% ) v be ( s at) - (v olts) v be - (v olts) i c - co l le c to r cur r e n t ( am ps) v ce - collector voltage (volts) safe operating area 11 0 0 0 10 100 0.001 0.01 0.1 1.0 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 100s 20 40 60 80 100 0 -1 -0.2 -0.4 -0.6 -0.8 switching speeds i c - collector current (amps) switching time -0.0001 -0.001 -0.01 -0.1 i c /i b =10 v ce =-10v -0.0001 -0.001 1 -0.01 -0.1 3 2 1 4 5 -0.1 -1 0 i b1 =i b2 =i c /10 -0.01 ztx554/55-2 ts tf td tr ts s tr ns 300 200 100 400 500 0 tf ns 600 400 200 800 1000 0 td ns 100 50 0 ztx554 zt x 5 5 5 -0.6 -0.0001 -0.001 -1 -0.01 -0.1 -0.8 -1.0 -1.2 -1.4 -0.6 -1 -0.0001 -0.001 -0.01 -0.1 i c /i b =10 -1.0 -1.2 -1.4 -0.8 0 v ce =-10v ztx554 ZTX555 3-199 ztx554 not recommended for new design please use ZTX555
pnp silicon planar medium power transistors issue 1 ? march 94 features * 150 volt v ceo * 1 amp continuous current *p tot = 1 watt absolute maximum ratings. parameter symbol ztx554 ZTX555 unit collector-base voltage v cbo -140 -160 v collector-emitter voltage v ceo -125 -150 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a power dissipation: at t amb = 25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j: t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx554 ZTX555 unit conditions. min. max min. max collector-base breakdown voltage v (br)cbo -140 -160 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -125 -150 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-100 m a collector cut-off current i cbo -0.1 -0.1 m a m a v cb =-120v v cb =-140v emitter cut-off current i ebo -0.1 -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.3 -0.3 v i c =-100ma, i b =-10ma* base-emitter saturation voltage v be(sat) -1 -1 v i c =-100ma, i b =-10ma* base-emitter turn-on voltage v be(on) -1 -1 v ic=-100ma, v ce =-10v* static forward current transfer ratio h fe 50 50 300 50 50 300 i c =-10ma, v ce =-10v* i c =-300ma, v ce =-10v* transition frequency f t 100 100 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 10 10 pf v cb =-10v, f=1mhz e-line to92 compatible ztx554 ZTX555 3-198 c b e typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( s at) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - normalised gain (% ) v be ( s at) - (v olts) v be - (v olts) i c - co l le c to r cur r e n t ( am ps) v ce - collector voltage (volts) safe operating area 11 0 0 0 10 100 0.001 0.01 0.1 1.0 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 100s 20 40 60 80 100 0 -1 -0.2 -0.4 -0.6 -0.8 switching speeds i c - collector current (amps) switching time -0.0001 -0.001 -0.01 -0.1 i c /i b =10 v ce =-10v -0.0001 -0.001 1 -0.01 -0.1 3 2 1 4 5 -0.1 -1 0 i b1 =i b2 =i c /10 -0.01 ztx554/55-2 ts tf td tr ts s tr ns 300 200 100 400 500 0 tf ns 600 400 200 800 1000 0 td ns 100 50 0 ztx554 zt x 5 5 5 -0.6 -0.0001 -0.001 -1 -0.01 -0.1 -0.8 -1.0 -1.2 -1.4 -0.6 -1 -0.0001 -0.001 -0.01 -0.1 i c /i b =10 -1.0 -1.2 -1.4 -0.8 0 v ce =-10v ztx554 ZTX555 3-199 ztx554 not recommended for new design please use ZTX555


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